Press release

onsemi to Develop Next-Generation GaN Power Devices with GlobalFoundries

Collaboration expands onsemi’s power portfolio to include high-performance 650V lateral GaN solutions for AI data centers, automotive, aerospace, and other

articleOn Semiconductor CorporationDecember 18, 20253/company/on-semiconductor-corporation/news/onsemi-develop-next-generation-gan-power-devices-globalfoundries-2025-12-18-0
onsemi to Develop Next-Generation GaN Power Devices with GlobalFoundries

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[{"type":"text","content":"Collaboration expands onsemi’s power portfolio to include high-performance 650V lateral GaN solutions for AI data centers, automotive, aerospace, and other critical marketsSummary: onsemi expands its leadership in intelligent power through a new collaboration agreement with GlobalFoundries (GF) to develop and manufacture next-generation gallium nitride (GaN) power devices, beginning with 650V. onsemi products will combine GF’s 200mm eMode GaN-on-silicon process with onsemi’s industry-leading silicon drivers, controllers, and thermally enhanced packaging to deliver smaller, more efficient systems optimized for AI data centers, automotive, industrial, and aerospace, defense, and security applications. News Highlights: onsemi collaborates with GlobalFoundries to develop state-of-the-art 200mm eMode lateral GaN-on-Silicon process technology for critical markets, starting with 650V.onsemi’s GaN portfolio is ideally suited for high-density systems where power demands continue to rise but physical size cannot, including AI data centers, electric vehicles, renewable energy, and aerospace, defense, and security systems.Applications include power supplies, DC-DC converters, onboard chargers, solar microinverters, energy storage systems, and motor drives across a range of high-growth markets. SCOTTSDALE, Ariz., and MALTA, N.Y., Dec. 18, 2025 (GLOBE NEWSWIRE) -- onsemi (Nasdaq: ON) today announced it has signed a collaboration agreement with GlobalFoundries (Nasdaq: GFS) (GF) to develop and manufacture advanced gallium nitride (GaN) power products using GF’s state-of-the-art 200mm eMode GaN-on-silicon process, starting with 650V. This collaboration accelerates onsemi’s roadmap for high-performance GaN devices and integrated power stages, expanding its portfolio with high-voltage products to meet the growing power demands of AI data centers, electric vehicles, renewable energy, industrial systems, and aerospace, defense and security. “This collaboration brings together onsemi’s system and product expertise with GlobalFoundries’ advanced GaN process to deliver new 650V power devices for high-growth markets. Paired with our silicon drivers and controllers, these GaN products will enable customers to innovate and build smaller, more efficient power systems for AI data centers, EVs, space applications, and beyond. We are on track to begin provid...

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