Press release
onsemi and Innoscience Announce Plans to Collaborate to Speed Global Rollout of GaN Power Portfolio
Collaboration would add high-volume, cost-optimized, worldwide GaN manufacturing for faster market deployment of energy-efficient power devicesSummary:onsemi
About this update from On Semiconductor Corporation
[{"type":"text","content":"Collaboration would add high-volume, cost-optimized, worldwide GaN manufacturing for faster market deployment of energy-efficient power devicesSummary:onsemi announced it has signed a memorandum of understanding with Innoscience to explore expanding production of gallium nitride (GaN) power devices using Innoscience’s proven 200mm GaN-on-silicon process. The collaboration would combine onsemi’s system integration, drivers, and packaging expertise with Innoscience’s GaN wafers and high-volume manufacturing leadership in an effort to bring cost-effective, energy-efficient solutions to market faster and accelerate GaN adoption. News Highlights: Collaboration would expand onsemi’s low and medium-voltage GaN power portfolio and scale GaN manufacturing worldwide for faster market availability and greater adoption.The non-binding MOU outlines a strategic partnership, including wafer procurement and extended collaboration, leveraging onsemi's GaN power solutions and Innoscience's leading wafer manufacturing to target the projected $2.9 billion total addressable market1 by 2030 for GaN power devices, with the potential value in the hundreds of million dollars for both companies.The arrangement would assist onsemi and Innoscience in their efforts to deliver significant customer value, specifically by combining onsemi’s expertise in packaging, drivers, and systems integration with Innoscience’s proven wafer manufacturing capabilities.The two companies’ technologies together are expected to enable smaller, more efficient GaN solutions for industrial, automotive, telecom infrastructure, consumer, and AI data center markets. SCOTTSDALE, Ariz., and SUZHOU, China, Dec. 02, 2025 (GLOBE NEWSWIRE) -- onsemi and Innoscience today announced the signing of a memorandum of understanding (MoU) to evaluate opportunities to accelerate deployment of GaN power devices, starting with 40-200V, and significantly broaden customer adoption. The collaboration outlined in the MoU brings together onsemi’s leadership in integrated systems and packaging with Innoscience’s proven GaN technology and high-volume manufacturing to enable delivery of cost-effective, highly efficient GaN products for industrial, automotive, telecom infrastructure, consumer and AI data center markets. GaN semiconductor devices offer higher switching speeds, smaller form factors, and lower e...