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Samsung Electronics and Nova Jointly awarded the Vladimir Ukraintsev Award at the SPIE Advanced Lithography conference
Nova (Nasdaq: NVMI) today announced that its co-authored paper with Samsung Electronics on "On-Cell Thickness Monitoring of Chalcogenide Alloy Layer using Spectral Interferometry, Raman Spectroscopy, and Hybrid Machine Learning" has been selected as the winner of the Vladimir Ukraintsev Award for "Collaborations in Metrology" at SPIE's 2024 Advanced Lithography + Patterning Conference.
About this update from Nova Ltd.
[{"type":"text","content":"REHOVOT, Israel, March 18, 2025 /PRNewswire/ -- Nova (Nasdaq: NVMI) today announced that its co-authored paper with Samsung Electronics on "On-Cell Thickness Monitoring of Chalcogenide Alloy Layer using Spectral Interferometry, Raman Spectroscopy, and Hybrid Machine Learning" has been selected as the winner of the Vladimir Ukraintsev Award for "Collaborations in Metrology" at SPIE's 2024 Advanced Lithography + Patterning Conference.","length":465,"tagName":"p"},{"type":"image","alt":"Nova Logo","displaySize":"","headline":null,"caption":"Nova Logo","className":"","disableSlideshowImg":false,"size":{"original":{"width":400,"height":67,"url":"https://media.zenfs.com/en/prnewswire.com/3a031a40fe76569e46616e407fcb9ed3"},"resized":{"url":"https://s.yimg.com/ny/api/res/1.2/RSNWSaqeSYpb2E43WGi0Vg--/YXBwaWQ9aGlnaGxhbmRlcjt3PTcwNTtoPTExODtjZj13ZWJw/https://media.zenfs.com/en/prnewswire.com/3a031a40fe76569e46616e407fcb9ed3","width":400,"height":67}}},{"type":"text","content":" ","length":6,"tagName":"p"},{"type":"text","content":"The award was granted to Nova and Samsung on the opening day of the 2025 conference. The paper is a result of continuous collaboration between the companies to explore innovative approaches to metrology in advanced chip manufacturing. The paper demonstrates the application of Nova's novel technologies in advanced process control by utilizing its unique and differentiated solutions.","length":388,"tagName":"p"},{"type":"text","content":"The thickness of the chalcogenide Ovonic Threshold Switching (OTS) layer is one of the most critical parameters for the Selector-Only Memory (SOM) process control. In this work, we successfully demonstrated an alternative approach to enable precise monitoring and control of the chalcogenide layer using hybrid metrology consisting of Spectral Interferometry, Raman Spectroscopy and Machine Learning algorithms. The paper details how these advanced techniques were applied to achieve accurate thickness monitoring, ensuring optimal performance and reliability of SOM devices.","length":575,"tagName":"p"},{"type":"text","content":""We are honored to receive this prestigious award in collaboration with Samsung Electronics," said Dr. Shay Wolfling, Chief Technology Officer of Nova. "This collaboration showcases Nova's capability to lev...