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NEO Battery Materials Receives Notice of Allowance for Patents on Silicon Battery for Drone and Defence-Tech Applications
Korean Intellectual Property Office Grants Two Patents on Materials & Process for Manufacturi...
About this update from Neo Battery Materials Ltd
[{"type":"text","content":"NEO Battery Materials Receives Notice of Allowance for Patents on Silicon Battery for Drone and Defence-Tech Applications\n\n\n\n\n Korean Intellectual Property Office Grants Two Patents on Materials & Process for Manufacturing P-100 and P-200 Silicon Battery Technology\n \n\n Integrating & Optimizing P-200 Series for Short-Duration, High-Capacity Electronics, Drone, and Defence Technology\n \n\n Lower Battery Validation Barrier for Electronics Expected to Expedite Silicon Technology Adoption Timeline\n \n\n\n\n\n TORONTO, July 23, 2025 (GLOBE NEWSWIRE) -- NEO Battery Materials Ltd. (“NEO” or the “Company”) (\n \n T\n \n\n S\n \n\n X\n \n\n V\n \n\n :\n \n\n NBM\n \n ) (\n \n OTC: NBMFF\n \n ), a low-cost silicon anode materials developer that enables longer-running, rapid-charging lithium-ion batteries, is pleased to announce that the Korean Intellectual Property Office (“KIPO”) has issued Notice of Allowances for two patents regarding the P-100 and P-200 silicon battery materials. NEO is in efforts to integrate the P-200 series for short-duration, high-capacity drone and defence-tech applications.\n \n\n With applications submitted in June 2023, KIPO has granted the Notice of Allowance to the Company regarding patents named\n \n Silicon-Based Active Anode Material for Lithium Secondary Battery and Manufacturing Method Thereof I\n \n (Silicon Patent I) and\n \n Silicon-Based Active Anode Material for Lithium Secondary Battery and Manufacturing Method Thereof II\n \n (Silicon Patent II). The patents will be duly issued and registered upon the completion of post-filing documentation.\n \n\n The two patents are the first intellectual property rights independently developed by NEO aside from the existing patents licensed and developed in tandem with the Yonsei University-Industry Foundation. Both Silicon Patent I and Silicon Patent II protect the material properties and proprietary manufacturing process of the P-100 and P-200 products, respectively:\n \n\n\n Silicon Patent I secures the critical phase of milling low-cost metallurgical silicon to form a core-shell composite structure between the silicon core and an amorphous silicon oxide layer\n \n\n Silicon Patent II secures the nanocoating and additive technology to create a uniform, thin polymer nanolayer on the Silicon Patent I ...