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Navitas Publishes World's First GaN Sustainability Report: "Electrify Our World™"
Each clean, green GaN power IC shipped saves 4 kg CO2. GaN could save up to 2.6 Gtons/year CO2 - equivalent to emissions from 650 coal-fired power stations EL
About this update from Navitas Semiconductor Corporation
[{"type":"text","content":"Each clean, green GaN power IC shipped saves 4 kg CO2. GaN could save up to 2.6 Gtons/year CO2 - equivalent to emissions from 650 coal-fired power stations\n\n\nEL SEGUNDO, Calif., Feb. 10, 2022 /PRNewswire/ -- Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in gallium nitride (GaN) power ICs has released its first annual sustainability report. As well as detailing the goals and progress of corporate initiatives to reduce its own greenhouse gas emissions, the Sustainability Report 2021 highlights how the company's GaN technology supports global carbon 'net-zero' ambitions by reducing Navitas customers' CO2 footprints and accelerating the evolution from fossil fuels to renewable energy sources and electricity-based applications.\n\n \n \n \n \n \n \n\n \nNavitas publishes world's first GaN sustainability report: \"Electrify Our World™\"Navitas is the first company to publish a sustainability report that comprehensively quantifies the positive impact of GaN power semiconductors on climate change based on global standards. The report includes a third-party Lifecycle Assessment (LCA) of GaN technology according to ISO14040/14044, the international standard for assessing environmental impacts throughout a product's life cycle — from raw material acquisition through production, use, end-of-life treatment, recycling and final disposal. The Navitas report also quantifies corporate Greenhouse Gas (GHG) impacts through third-party assessments.\nGallium metal is derived as a by-product when smelting aluminum, and nitrogen is readily-available in our atmosphere, so GaN has a minimal material-origin CO2 footprint, is easily sourced and low cost. GaN is also non-toxic and free from conflict-mineral concerns. And although GaN is an advanced 'wide band-gap' semiconductor material, GaN power IC devices can be manufactured using older, well established and available CMOS processing equipment (350nm). As a result, GaN device production today yields 3-5x greater output for a given equipment set when compared to traditional silicon power devices.\nAs a next-gen power semiconductor, GaN runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging in half the size and weight. Navitas' GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient p...