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Navitas Launches into High-Power Markets with GeneSiC SiCPAK™ Modules and Accelerates Bare-Die Sales
Pioneers of SiC technology “Electrify Our World™” and enable expanded applications ranging from 10s kW to MW in rail, EV, industry, solar, wind and energy
About this update from Navitas Semiconductor Corporation
[{"type":"text","content":"Pioneers of SiC technology “Electrify Our World™” and enable expanded applications ranging from 10s kW to MW in rail, EV, industry, solar, wind and energy storage\nTORRANCE, Calif., May 08, 2023 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company, announces their expanded portfolio into higher power markets with their leading-edge silicon carbide (SiC) power products in SiCPAK™ modules and bare die. Target applications cover centralized and string solar inverters, energy storage systems (ESS), industrial motion, electric vehicle (EV) on-board chargers, EV roadside fast chargers, wind energy, UPS, bi-directional microgrids, DC-DC converters, and solid-state circuit breakers. Ranging from 650 V to 6,500 V, Navitas has the widest range of SiC technology. From an original line-up of discrete packages - from 8x8 mm surface-mount QFNs to through-hole TO-247s - the GeneSiC SiCPAK is an initial, direct entry point into higher-power applications. A comprehensive power-module roadmap, with high-voltage SiC MOSFETs and MPS diodes, GaN power ICs, high-speed digital isolators and low-voltage silicon control ICs is being mapped out. Dr. Ranbir Singh, Navitas EVP for SiC noted, “With a complete portfolio of leading-edge power, control and isolation technology, Navitas will enable customers to accelerate the transition from fossil fuels, and legacy silicon power products to new, renewable energy sources and next-generation semiconductors, with more powerful, more efficient, faster-charging systems.” SiCPAK™ modules employ ‘press-fit’ technology to offer compact form factors for power circuits and deliver cost-effective, power-dense solutions to end users. The modules are built upon GeneSiC die that have already made a mark in terms of superior performance, reliability, and ruggedness. Examples include a SiCPAK half-bridge module, rated at 6 mOhm, 1,200 V with industry-leading trench-assisted planar-gate SiC MOSFET technology. Multiple configurations of SiC MOSFETs and MPS diodes will be available to create application-specific modules for superior system performance. The initial release will include 1,200 V-rated half-bridge modules in 6, 12, 20, and 30mOhm ratings. Within the lead-free SiCPAK, each SiC chip is silver (Ag) sintered to the module’s substrate for superior cooli...