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Navitas Introduces Third Generation GaN Power IC with GaNSense™ Technology
GaNSense delivers highest efficiency and reliability through real-time autonomous sensing and protection for the $4B mobile charger and consumer market EL

About this update from Navitas Semiconductor Corporation
[{"type":"text","content":"GaNSense delivers highest efficiency and reliability through real-time autonomous sensing and protection for the $4B mobile charger and consumer market\n\n\nEL SEGUNDO, Calif., Nov. 5, 2021 /PRNewswire/ -- Navitas Semiconductor (Nasdaq:NVTS), the industry-leader in gallium nitride (GaN) power integrated circuits (\"ICs\") has announced the launch of GaNFast™ power ICs with GaNSense technology. GaNSense technology integrates critical, real-time, autonomous sensing and protection circuits which further improves Navitas' industry-leading reliability and robustness, while increasing the energy savings and fast-charging benefits of Navitas' GaN IC technology. \n\n \n \n \n \n \n \n\n \nThe new family of GaN power ICs with GaNSense technology spans 10 products. Gallium nitride (GaN) is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging in half the size and weight. Navitas' GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. \nGaNSense technology integrates real-time, accurate and fast sensing of system parameters including current and temperature. This technology enables a patent-pending loss-less current-sensing capability, which improves energy savings by up to an additional 10% compared to prior generations, as well as further reducing external component count and shrinking system footprints. In addition, if the GaN IC identifies a potentially dangerous system condition, the IC is designed to transition rapidly to a cycle-by-cycle sleep-state, protecting both the device and the surrounding system. GaNSense also integrates an autonomous standby-power feature which automatically reduces standby power consumption when the GaN IC is in idle-mode, helping to further reduce power consumptions, which is especially important to the growing list of customers aggressively pursuing their own environmental initiatives. \nWith the industry's tightest current-measurement accuracy and GaNFast response time, GaNSense technology means reducing dangerous over-current spikes by 50% and reducing time in the 'danger zone' by 50% compared to previous best-in-class solutions. GaNFast monolithic integration delivers dependable, glitch-free operation with no 'ringing', for improved ...