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Navitas and realme Launched World’s First 240W Ultra-Fast Charging Phone at MWC
Next-gen gallium nitride (GaN) drives ‘Speed to the Max’ SUPERVOOC milestone, with 100% charge in under ten minutes TORRANCE, Calif., April 03, 2023 (GLOBE
About this update from Navitas Semiconductor Corporation
[{"type":"text","content":"Next-gen gallium nitride (GaN) drives ‘Speed to the Max’ SUPERVOOC milestone, with 100% charge in under ten minutes\nTORRANCE, Calif., April 03, 2023 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company, has announced that its next-generation GaNFast™ technology has been adopted for the ‘in-box’ 240 W ultra-fast charger provided with the recently-announced realme GT3 smartphone. Launched at this year’s Mobile World Conference (MWC), realme’s GT3 is a powerful and stylish new Android device and the world’s first smartphone to offer the power of 240 W charging. The phone sports a Snapdragon 8+ Gen 1 chipset, features a 6.74 inch 10-bit AMOLED screen with a 144 Hz refresh rate and includes a customizable rear RGB LED rectangle that supports 25 colors. The dual-port SUPERVOOC fast charger included with the GT3 is fully certified by TÜV Rheinland and built around two Navitas NV6138 GaN power ICs in CRM PFC and HFQR flyback topologies. With a form factor of only 57 x 58 x 30 mm (99 cc) and weighing just 173 g, the charger has a power density of 2.42 W/cc and can fully charge the GT3’s 4600 mAh battery in a lightning-fast nine minutes and 30 seconds. A charge of 50% is possible in as little as four minutes, while a quick-shot 30-second charge delivers two hours talk-time. GaNFast power ICs integrate a high-performance GaN FET with GaN gate-drive to achieve unprecedented high-frequency, high-efficiency operation. Additional GaNSense™ technology enables real-time, accurate sensing of voltage, current and temperature with autonomous control. Loss-less current sensing eliminates external current-sensing resistors and hot-spots, while increasing system efficiency. Chase Xu, Vice President of realme, President of realme Global Marketing commented: “With the GT3 we have eliminated battery anxiety by providing the world’s most powerful smartphone-charging solution that delivers the maximum power that USB Type-C will support. Navitas GaNFast ICs featuring GaNSense technology are the key to realizing this world’s first.” “We would like to congratulate realme on the global launch of the GT3,”said David Carroll, SVP of Global Sales at Navitas. “This ultra-fast-charging milestone, supports our mission to Electrify Our World™ by helping our clients set fast-charging records and del...