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Navitas Adds Top-Side Cooled QDPAK and Low-Profile TO-247-4L to its Package Line-Up in the Latest 5th Generation GeneSiC™ Technology
QDPAK and Low-profile TO247 in the latest GeneSiC™ 5th Generation Trench-Assisted Planar SiC MOSFET technology deliver significant improvements in performance
About this update from Navitas Semiconductor Corporation
[{"type":"text","content":"QDPAK and Low-profile TO247 in the latest GeneSiC™ 5th Generation Trench-Assisted Planar SiC MOSFET technology deliver significant improvements in performance and lifetime for AI data centers, grid and energy infrastructure, and industrial electrification with voltage ratings of 1200 V\nTORRANCE, Calif., March 11, 2026 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the launch of two new packages: top-side cooled QDPAK and a low-profile TO-247-4L with asymmetrical leads in its 5th generation GeneSiC™ technology platform. The latest 1200 V SiC MOSFET products set a new industry benchmark for power density and ruggedness. 5th generation Trench-Assisted Planar (TAP) technologyThis technology delivers 35% improvements in RDS,ON × QGD figure of merit (FoM), and about 25% improvement in QGD / QGS ratio. When coupled with stable high threshold voltage, VGS,TH, of >3 V, this technology ensures immunity against parasitic turn-on, providing a robust and predictable switching performance. Top-side cooled (TSC) QDPAKThe QDPAK package is designed to overcome the thermal limitations of conventional PCB cooling by enabling heat dissipation directly through the top of the package to the heatsink. This optimized thermal path significantly improves heat dissipation efficiency and enables smaller system footprints. The package also minimizes parasitic inductance, supporting cleaner switching and higher efficiency at high frequencies. In addition, the QDPAK platform supports larger die sizes and higher current capability, facilitating the ultra-low RDS(ON) values for high-power applications, while its compact surface-mount profile enables scalable high-volume automated assembly. Compact footprint: Features a 15 mm x 21 mm area with an ultra-low height of only 2.3 mm.Enhanced creepage: Optimized with a groove in the package mold compound that extends creepage to 5 mm without trading off the area of the exposed top-side thermal pad.High-voltage integration: Supports up to 1000 VRMS applications with an epoxy molding compound (EMC) featuring a Comparative Tracking Index (CTI) of >600.Thermal integration: Designed for easier system-level thermal integration via top-side cooling. Low-profile TO-247-4-LPT...