Press release
Lam Research Introduces Lam Cryo™ 3.0 Cryogenic Etch Technology to Accelerate Scaling of 3D NAND for the AI Era
Production-proven innovation addresses critical manufacturing challenges as memory makers target 1,000-layer 3D NAND by decade end FREMONT, Calif., July 31,
About this update from Lam Research Corporation
[{"type":"text","content":"Production-proven innovation addresses critical manufacturing challenges as memory makers target 1,000-layer 3D NAND by decade end\n\n\nFREMONT, Calif., July 31, 2024 /PRNewswire/ -- Lam Research Corp. (Nasdaq: LRCX) today extended its leadership in 3D NAND flash memory etching with the introduction of Lam Cryo™ 3.0, the third generation of the company's production-proven cryogenic dielectric etch technology. As the proliferation of generative artificial intelligence (AI) continues to propel the demand for memory with higher capacity and performance, Lam Cryo 3.0 provides etch capabilities critical for the manufacturing of future leading-edge 3D NAND. Leveraging ultra cold temperatures, high power confined plasma reactor technology, and innovations in surface chemistry, Lam Cryo 3.0 etches with industry-leading precision and profile control.\nLam Cryo 3.0 cryogenic etch breakthrough paves the way for 1000-layer 3D NAND to meet AI rising data storage demands\"Lam Cryo 3.0 paves the way for customers on the path to 1,000-layer 3D NAND,\" said Sesha Varadarajan, senior vice president of Global Products Group at Lam Research. \"With five million wafers already manufactured using Lam cryogenic etch, our newest technology is a breakthrough in 3D NAND production. It creates high aspect ratio (HAR) features with angstrom-level precision, while delivering lower environmental impact and more than double the etch rate of conventional dielectric processes. Lam Cryo 3.0 is the etch technology our customers need to overcome the AI era's key NAND manufacturing hurdles.\"\nTo date, 3D NAND has primarily advanced through the stacking of vertical layers of memory cells, which are enabled by etching deep and narrow HAR memory channels. Slight, atomic-scale deviations from the target profile of these features can negatively affect electrical properties of the die and potentially impact yield. Lam Cryo 3.0 is optimized to address these and other etch challenges to scaling.\n\"AI is driving exponential demand in capacity and on the performance of flash memory both at the cloud and the edge. This is compelling chipmakers to scale NAND flash in the race to achieve 1000-layer 3D NAND by the end of 2030,\" said Neil Shah, co-founder and vice president of research at Counterpoint Research. \"Lam Cryo 3.0 cryogenic etch technology is a significant leap bey...