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onsemi and Innoscience Announce Plans to Collaborate to Speed Global Rollout of GaN Power Portfolio
Collaboration would add high-volume, cost-optimized, worldwide GaN manufacturing for faster market deployment of energy-efficient power devicesSummary:onsemi announced it has signed a memorandum of understanding with Innoscience to explore expanding production of gallium nitride (GaN) power devices using Innoscience’s proven 200mm GaN-on-silicon process. The collaboration would combine onsemi’s system integration, drivers, and packaging expertise with Innoscience’s GaN wafers and high-volume man
About this update from Innoscience (suzhou) Technology Holding Co Ltd Class H
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