Press release
GlobalFoundries Awarded $35 Million Funding from U.S. Government to Accelerate Manufacturing of Next-Generation GaN Chips
In partnership with U.S. Government, GF’s semiconductor manufacturing facility in Vermont continues to move closer to large-scale production of
About this update from Globalfoundries Inc.
[{"type":"text","content":"In partnership with U.S. Government, GF’s semiconductor manufacturing facility in Vermont continues to move closer to large-scale production of next-generation gallium nitride chips for use in aerospace and defense, cellular communications, industrial IoT and automobiles\nESSEX JUNCTION, Vt., Oct. 18, 2023 (GLOBE NEWSWIRE) -- GlobalFoundries (Nasdaq: GFS) (GF) has been awarded $35 million in federal funding from the U.S. government to accelerate the manufacturing of GF’s differentiated gallium nitride (GaN) on silicon semiconductors at its facility in Essex Junction, Vermont. This funding brings GF closer to large-scale production of GaN chips, which are unique in their ability to handle high voltages and temperatures. These chips are positioned to enable game-changing performance and efficiency in 5G and 6G cellular communications for infrastructure and handsets, automotive and industrial Internet of things (IoT), as well as power grids and other critical infrastructure. With the new $35 million in funding, awarded by the Department of Defense’s Trusted Access Program Office (TAPO), GF plans to purchase additional tools to expand development and prototyping capabilities, moving closer to at-scale 200mm GaN-on-silicon semiconductor manufacturing. As part of the investment, GF plans to implement new capabilities for reducing the exposure of GF and its customers to supply chain constraints of gallium, while improving the speed of development, assurance of supply and competitiveness of U.S-made GaN chips. The funding builds on years of collaboration with the U.S. government – including $40 million in support from 2020-2022 – that leverages the talent of GF's Vermont team and their 200mm semiconductor manufacturing experience, and applies it to GaN-on-silicon manufacturing. 200mm is state-of-the-art for GaN chip technology. “Vermont is a leader in semiconductor innovation. This federal funding is welcome news, and will solidify our state’s position as a leader at the forefront of manufacturing next-generation chips,” said Senator Peter Welch. “It’s critical we support investment in this industry here in Vermont and in the U.S. – both for our local economic growth and for our national security. I look forward to continuing to fight for our domestic semiconductor and chip manufacturers in the Senate.” \"This strategic investment conti...