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Axcelis Announces Joint Development Program with GE Aerospace For the Development of High Voltage Superjunction Power Devices
Axcelis Technologies, Inc. (Nasdaq: ACLS), a leading supplier of enabling ion implantation solutions for the semiconductor industry, announced a Joint Development Program (JDP) with GE Aerospace focused on the development of production-worthy 6.5 to 10kV superjunction power devices. Processes will be developed on Axcelis' Purion XEmax™ high energy implanter, which provides the industry's highest beam currents over the broadest energy range — up to 15MeV.
About this update from Ge Aerospace
[{"type":"text","content":"BEVERLY, Mass., Aug. 20, 2025 /PRNewswire/ -- Axcelis Technologies, Inc. (Nasdaq: ACLS), a leading supplier of enabling ion implantation solutions for the semiconductor industry, announced a Joint Development Program (JDP) with GE Aerospace focused on the development of production-worthy 6.5 to 10kV superjunction power devices. Processes will be developed on Axcelis' Purion XEmax™ high energy implanter, which provides the industry's highest beam currents over the broadest energy range — up to 15MeV.","length":517,"tagName":"p"},{"type":"image","alt":"Axcelis’ Purion XEmax™ high energy implanter provides the industry’s highest beam currents over the broadest energy range — up to 15MeV.","displaySize":"","headline":null,"caption":"Axcelis’ Purion XEmax™ high energy implanter provides the industry’s highest beam currents over the broadest energy range — up to 15MeV.","className":"","disableSlideshowImg":false,"size":{"original":{"width":400,"height":273,"url":"https://media.zenfs.com/en/prnewswire.com/8d471d1f83aa6ae281b27b0d3fed5b57"},"resized":{"url":"https://s.yimg.com/ny/api/res/1.2/Fj6Q5mZ_SqtfjOLLbSRJXg--/YXBwaWQ9aGlnaGxhbmRlcjt3PTcwNTtoPTQ4MTtjZj13ZWJw/https://media.zenfs.com/en/prnewswire.com/8d471d1f83aa6ae281b27b0d3fed5b57","width":400,"height":273}},"href":"https://mma.prnewswire.com/media/2753736/Axcelis_Technologies__Purion_XEmax_high_energy_implanter_provides_the_industry_s_highest_beam_curre.html","hrefExternal":true,"rel":"nofollow"},{"type":"text","content":"This JDP supports the 'Advanced High Voltage Silicon Carbide Switches' project led by GE Aerospace as part of the Commercial Leap Ahead for Wide Bandgap Semiconductors (CLAWS) Hub, which is headed by North Carolina State University. This project will aim to improve the performance of power switches used in important emerging applications.","length":348,"tagName":"p"},{"type":"text","content":"Silicon Carbide (SiC) wide bandgap semiconductors deliver higher voltages, operating temperatures and frequencies compared to traditional Silicon (Si) devices. These semiconductor devices are enabling for many applications in the aerospace and defense sector through reduced power consumption and smaller packaging of critical systems. On the commercial side, high voltage wide bandgap semiconductors are expected to pla...