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Alpha and Omega Semiconductor Releases Automotive Qualified 1200VαSiC MOSFETs for Electric Vehicle Applications
SUNNYVALE, Calif.--(BUSINESS WIRE)-- Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL) a designer, developer, and global supplier of a broad range
About this update from Alpha And Omega Semiconductor Limited
[{"type":"text","content":" SUNNYVALE, Calif.--(BUSINESS WIRE)--\nAlpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL) a designer, developer, and global supplier of a broad range of power semiconductors, power ICs, and digital power products, today announced the release of the new AEC-Q101 qualified 1200V silicon carbide (SiC) αSiC MOSFETs in optimized TO-247-4L package. Ideal for the high efficiency and reliability requirements of electric vehicle (EV) on-board chargers, motor drive inverters, and off-board charging stations, these 1200V SiC MOSFETs provide the industry-leading lowest on-resistance available for an automotive qualified TO-247-4L with a standard gate drive of 15V.\nThis press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20210302005180/en/AOM033V120X2Q -- Automotive Qualified 1200V αSIC MOSFET (Photo: Business Wire)\nAs the EV market accelerates into millions of units per year, vehicle manufacturers are increasingly implementing 800V electrical systems to reduce the system’s size and weight while increasing range and enabling significantly faster charging speeds. AOS’s 1200V automotive grade αSiC MOSFETs are specifically designed for these demanding applications by providing superior switching performance and efficiency over standard silicon devices.\n\nThe AOM033V120X2Q is a 1200V / 33mΩ SiC MOSFET based on our second generation αSiC MOSFET platform packaged in an optimized TO-247-4L. Unlike the standard 3 lead package, using an additional sense lead reduces the package inductance effects and enables the device to operate at a higher switching frequency with up to 75% reduction in switching losses compared to standard packaging. The recommended gate driving voltage of only 15V allows for the widest compatibility of gate drivers for ease of adoption in a variety of system designs. In addition, αSiC MOSFETs have a very low increase in on-resistance up to the rated 175° C to minimize power losses and further increase efficiency.\n\n“For the continued transformation of transportation to EV technology, vehicle manufacturers making efforts to increase range and reduce the time spent charging. With our release of these automotive qualified 1200V αSiC MOSFETs, AOS can provide designers with next generation semiconductor technology to increase these efficiency targets. Our customers have sel...