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Alpha and Omega Semiconductor Introduces Latest 80V Power MOSFET With Shield Gate Technology
SUNNYVALE, Calif.--(BUSINESS WIRE)-- Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL), a designer, developer, and global supplier of a broad range
About this update from Alpha And Omega Semiconductor Limited
[{"type":"text","content":" SUNNYVALE, Calif.--(BUSINESS WIRE)--\nAlpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL), a designer, developer, and global supplier of a broad range of power semiconductors, power ICs, and digital power products, today announced the release of our latest 80V Power MOSFET using patented Shield Gate Technology which is optimized for higher switching frequencies used in telecom and server power supply to achieve higher efficiency compared to the previous generation. The new 80V Power MOSFET technology has lower switching losses in hard switching, topologies and have less voltage overshoot than the previous generation. This improved performance from light load operation and throughout the load range results in easier design choices for high-efficiency applications. The 80V MOSFET family of devices offers the highest levels of power density and energy efficiency, which are essential in solar, power supplies, and battery power applications such as in eScooters.\nThis press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20211116005568/en/Latest 80V Power MOSFET with Shield Gate Technology (Graphic: Business Wire)\nAONR66820 and AONS66811 are Power MOSFETs in DFN3.3x3.3 and DFN 5x6 package, respectively. AONR66820 is perfectly suited for isolated DC-DC converters used in telecom applications. AONS66811 is appropriate for synchronous rectification and provides improved reverse recovery charge and reduced voltage overshoot, which provides higher efficiency and more robustness to the power supply.\n\nThe AOTL66810 (80V) in TOLL package has approximately 25% smaller footprint than a standard wire-bonded TO-263 (D2PAK) package. This new device offers a higher power density compared to existing solutions. It is ideally suited for industrial BLDC motor applications and battery management to reduce the number of MOSFETs in parallel. The AOTL66810 has a 1.25mOhms max at 10Vgs with a maximum drain current of 420A at 25°C. The pulsed current at 1700A, is limited by the maximum junction temperature of 175°C.\n\n“With the significant performance improvement with clip technology in a robust TOLL package enables higher current density and higher current capability. The AOTL66810 simplifies new designs to enable savings in overall system cost due to a reduced number of devices in parallel. AOS’...