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      <title>ROHM Develops 5th Generation SiC MOSFETs with Approximately 30% Lower On-Resistance at High Temperatures</title>
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      <pubDate>Tue, 21 Apr 2026 16:34:00 GMT</pubDate>
      <description>ROHM Develops Latest Device of its EcoSiC™ Series: The 5th generation SiC MOSFETs optimized for high-efficiency power applications. Reducing On-Resistance at High Temperatures Compared to Conventional 4th Generation Products Contributes to making units smaller while increasing output power in high temperature applications. Santa Clara, CA and Kyoto, Japan, April 21, 2026 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced it has developed the latest device of its EcoSiC™ series: the 5th Gener</description>
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